High Power 1300 nm Fabry-Perot and DFB Ridge Waveguide Lasers
نویسندگان
چکیده
In this paper we summarize the results [1] on the development of high power 1300 nm ridge waveguide Fabry-Perot and distributed-feedback (DFB) lasers. Improved performance of MOCVD grown InGaAsP/InP laser structures and optimization of the ridge waveguide design allowed us to achieve more than 800 mW output power from 1300 nm single mode Fabry-Perot lasers. Despite the fact that the beam aspect ratio for ridge lasers (30 × 12) is higher than that for buried devices, our modeling and experiments demonstrated that the fiber coupling efficiency of about 75-80% could be routinely achieved using a lensed fiber or a simple lens pair. Fiber power of higher than 600 mW was displayed. Utilizing similar epitaxial structures and device geometry, the 1300 nm DFB lasers with output power of 500 mW have been fabricated. Analysis of the laser spectral characteristics shows that the high power DFB lasers can be separated into several groups. The single frequency spectral behavior was exhibited by about 20 % of all studied DFB lasers. For these lasers, side-mode suppression increases from 45 dB at low current up to 60 dB at maximum current. About 30 % of DFB lasers, at all driving currents, demonstrate multi-frequency spectra consisting of 4-8 longitudinal modes with mode spacing larger than that for Fabry-Perot lasers of the same cavity length. Both single frequency and multi frequency DFB lasers exhibit weak wavelength-temperature dependence and very low relative intensity noise (RIN) values. Fabry-Perot and both types of DFB lasers can be used as pump sources for Raman amplifiers operating in the 1300 nm wavelength range where the use of EDFA is not feasible. In addition, the single-mode 1300 nm DFB lasers operating in the 500 mW power range are very attractive for new generation of the cable television transmission and local communication systems.
منابع مشابه
Heterogeneously Integrated Distributed Feedback Quantum Cascade Lasers on Silicon
Silicon integration of mid-infrared (MIR) photonic devices promises to enable low-cost, compact sensing and detection capabilities that are compatible with existing silicon photonic and silicon electronic technologies. Heterogeneous integration by bonding III-V wafers to silicon waveguides has been employed previously to build integrated diode lasers for wavelengths from 1310 to 2010 nm. Recent...
متن کاملA pulsated weak-resonant-cavity laser diode with transient wavelength scanning and tracking for injection-locked RZ transmission.
By spectrally slicing a single longitudinal-mode from a master weak-resonant-cavity Fabry-Perot laser diode with transient wavelength scanning and tracking functions, the broadened self-injection-locking of a slave weak-resonant-cavity Fabry-Perot laser diode is demonstrated to achieve bi-directional transmission in a 200-GHz array-waveguide-grating channelized dense-wavelength-division-multipl...
متن کاملUltra-narrow-linewidth Al2O3:Er3+ lasers with a wavelength-insensitive waveguide design on a wafer-scale silicon nitride platform.
We report ultra-narrow-linewidth erbium-doped aluminum oxide (Al2O3:Er3+) distributed feedback (DFB) lasers with a wavelength-insensitive silicon-compatible waveguide design. The waveguide consists of five silicon nitride (SiNx) segments buried under silicon dioxide (SiO2) with a layer Al2O3:Er3+ deposited on top. This design has a high confinement factor (> 85%) and a near perfect (> 98%) inte...
متن کاملNarrow-band generation in random distributed feedback fiber laser.
Narrow-band emission of spectral width down to ~0.05 nm line-width is achieved in the random distributed feedback fiber laser employing narrow-band fiber Bragg grating or fiber Fabry-Perot interferometer filters. The observed line-width is ~10 times less than line-width of other demonstrated up to date random distributed feedback fiber lasers. The random DFB laser with Fabry-Perot interferomete...
متن کاملNanoantenna couplers for metal- insulator-metal waveguide interconnects
State-of-the-art copper interconnects suffer from increasing spatial power dissipation due to chip downscaling and RC delays reducing operation bandwidth. Wide bandwidth, minimized Ohmic loss, deep sub-wavelength confinement and high integration density are key features that make metal-insulator-metal waveguides (MIM) utilizing plasmonic modes attractive for applications in on-chip optical sign...
متن کامل